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參數(shù)資料
| 型號： | BCR5KM-12 |
| 英文描述： | TRIAC|600V V(DRM)|5A I(T)RMS|TO-220AB |
| 中文描述： | 可控硅| 600V的五（DRM）的| 5A條口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大小： | 129K |
| 代理商： | BCR5KM-12 |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
10
0
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
7
5
3
2
10
1
7
5
3
2
5
7
5
3
2
10
–
1
V
GT
= 1.5V
I
GM
= 2A
P
GM
= 3W
P
GM
= 0.3W
T
j
= 25
°
C
I
GT
= 15mA
V
GD
= 0.1V
V
GM
= 10V
0
10
–
1
2
0.5
1.0
1.5
2.0
4.0
2.5
3.0
3.5
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
2 3
10
2
5 7
7
10
2
2
10
3
3
5 7
2
10
4
3
5 7
2
10
5
3
5 7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
0
2
4
6
8
10
9
7
5
3
1
0
1
2
3
4
5
6
7
8
9
10
10
1
10
3
7
5
4
3
2
10
2
7
5
4
3
2
–
60
–
20
20
60
100
160
140
–
40
0
40
80
120
10
0
10
2
5
3
10
1
5
3
7
2
7
2
10
3
5
3
7
2
–
60
–
20
20
60
100
160
140
–
40
0
40
80
120
I
FGT I
I
RGT I
I
RGT III
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
T
°
C
CONDUCTION TIME
(CYCLES AT 60Hz)
T
°
C
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
(
Ι
,
ΙΙ
AND
ΙΙΙ
)
G
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
G
j
°
C
G
j
°
C
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
G
j
°
C
G
j
°
C
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
MAXIMUM ON-STATE POWER
DISSIPATION
O
RMS ON-STATE CURRENT (A)
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
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