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參數(shù)資料
| 型號(hào)： | BCR5KM-12 |
| 英文描述： | TRIAC|600V V(DRM)|5A I(T)RMS|TO-220AB |
| 中文描述： | 可控硅| 600V的五（DRM）的| 5A條口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | BCR5KM-12 |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
10
0
10
1
2
3 4 5
7
10
2
2
3 4 5
7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
I
FGT I
I
RGT I
I
RGT III
2 3
10
1
5 710
2
2 3 5 710
3
2 3 5 710
4
120
0
20
40
60
80
100
140
160
160
100
80
40
20
0
–
60
140
40
–
40
–
20 0
20
60 80
140
100120
60
120
TYPICAL EXAMPLE
TYPICAL EXAMPLE
III QUADRANT
T
j
= 125
°
C
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°
C)
1
B
j
°
C
B
j
°
C
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER PULSE WIDTH (
μ
s)
1
G
G
I QUADRANT
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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| BCR5PM-12 | BCR5PM-12 Datasheet 504K/MAR.20.03 |
| BCR5PM12L | TRIAC|600V V(DRM)|5A I(T)RMS|TO-220AB |
| BCR5PM12R | TRIAC|600V V(DRM)|5A I(T)RMS|TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCR5KM-12LA | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Triac Medium Power Use |
| BCR5KM-12LA-A8 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Triac Medium Power Use |
| BCR5KM-12LA-A8(#B00) | 制造商:Renesas Electronics Corporation 功能描述:Thyristor TRIAC 600V 50A 3-Pin(3+Tab) TO-220FN Tube |
| BCR5KM-12LB | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Triac Medium Power Use |
| BCR5KM-12LB(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
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