參數(shù)資料
型號(hào): BCR20AM8R
英文描述: TRIAC|400V V(DRM)|20A I(T)RMS|TO-220AB
中文描述: 可控硅| 400V五(DRM)的|甲口(T)的有效值| TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 7/12頁(yè)
文件大小: 376K
代理商: BCR20AM8R
Mar. 2002
Measurement point of
case temperature
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
1
±
1
±
10
±
0.3
2.8
±
0.2
φ
3.2
±
0.2
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
2
±
4
±
0.75
±
0.15
3
±
3
±
6
±
E
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20KM
OUTLINE DRAWING
Dimensions in mm
TO-220FN
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
G
I
T (RMS)
................................................................ 20A
G
V
DRM
................................................................. 600V
G
I
FGT
!
, I
RGT
!
, I
RGT
#
.................................... 20mA
G
V
iso
................................................................. 2000V
G
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
1. Gate open.
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
V
iso
Symbol
A
A
A
2
s
W
W
V
A
°
C
°
C
g
V
20
200
167
5
0.5
10
2
–40 ~ +150
–40 ~ +150
2.0
2000
Symbol
V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
DRM
V
DSM
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class
12
600
720
Unit
Ratings
Unit
Conditions
Commercial frequency, sine full wave 360
°
conduction, Tc=110
°
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Typical value
T
a
=25
°
C, AC 1 minute, T
1
· T
2
· G terminal to case
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
The product guaranteed maximum junction
temperature 150
°
C (See warning.)
相關(guān)PDF資料
PDF描述
BCR22PNQ62702C2375 TRANSISTOR DIGITAL SOT363
BCR25A10 TRIAC|500V V(DRM)|25A I(T)RMS|TO-208VARM6
BCR25B8L TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R-HW30
BCR25B8R TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R-HW30
BCR25A10L TRIAC|500V V(DRM)|25A I(T)RMS|TO-208VARM6
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BCR20B 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20B10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|20A I(T)RMS|FBASE-R-HW23
BCR20B10L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|20A I(T)RMS|FBASE-R-HW23
BCR20B10R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|20A I(T)RMS|FBASE-R-HW23
BCR20B8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|400V V(DRM)|20A I(T)RMS|FBASE-R-HW23