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參數(shù)資料
| 型號(hào)： | BCR20AM8R |
| 英文描述： | TRIAC|400V V(DRM)|20A I(T)RMS|TO-220AB |
| 中文描述： | 可控硅| 400V五（DRM）的|甲口（T）的有效值| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 376K |
| 代理商： | BCR20AM8R |
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°
C
10
10
3
7
5
3
2
10
0
2
3
5 7
10
1
10
2
7
5
3
2
2
3
5 7
10
2
10
1
10
2
2
3
10
1
5
7
3
5
7
10
2
7
5
3
2
7
5
7
3
2
10
0
10
1
7
2 3
5
7
2 3
5
2 3
5
10
2
10
3
7
10
4
120
0
20
40
60
80
100
140
6
6
6
6V
6V
6V
330
330
330
A
V
A
V
A
V
TYPICAL EXAMPLE
T
j
= 125
°
C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
μ
s)
1
B
μ
s
B
μ
s
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
T
j
= 125
°
C
I
T
= 4A
τ
= 500
μ
s
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
COMMUTATION CHARACTERISTICS
C
C
μ
s
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
SUPPLY
TIME
TIME
TIME
V
D
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
(dv/dt)c
I
FGT I
I
RGT I
I
RGT III
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER PULSE WIDTH (
μ
s)
1
G
G
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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