參數(shù)資料
型號: BCF30
廠商: DIOTEC SEMICONDUCTOR AG
英文描述: Surface mount Si-Epitaxial PlanarTransistors
中文描述: 表面貼裝硅外延PlanarTransistors
文件頁數(shù): 4/8頁
文件大?。?/td> 49K
代理商: BCF30
1997 May 22
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BCF29; BCF30
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
100
10
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
32 V
I
E
= 0; V
CB
=
32 V; T
j
= 100
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
10
μ
A; V
CE
=
5 V
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BCF29
BCF30
DC current gain
BCF29
BCF30
collector-emitter saturation voltage I
C
=
10 mA; I
B
=
0.5 mA
90
150
h
FE
I
C
=
2 mA; V
CE
=
5 V
120
215
600
80
150
720
810
4.5
1
260
500
300
750
4
V
CEsat
mV
mV
mV
mV
mV
pF
MHz
dB
I
C
=
50 mV; I
B
=
2.5 mA
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
50 mA; I
B
=
2.5 mA
I
C
=
2 mA; V
CE
=
5 V
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz 100
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
V
BEsat
base-emitter saturation voltage
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
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