參數(shù)資料
型號(hào): BCF30
廠商: DIOTEC SEMICONDUCTOR AG
英文描述: Surface mount Si-Epitaxial PlanarTransistors
中文描述: 表面貼裝硅外延PlanarTransistors
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 49K
代理商: BCF30
1997 May 22
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BCF29; BCF30
FEATURES
Low current (max. 100 mA)
Low voltage (max. 32 V).
APPLICATIONS
Low level, low noise general purpose applications in
thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCF32 and BCF33.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
MARKING
TYPE NUMBER
MARKING CODE
BCF29
BCF30
C7p
C8p
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
32
32
200
250
UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
BCF29
BCF30
transition frequency
open emitter
open base
V
V
mA
mW
T
amb
25
°
C
I
C
=
2 mA; V
CE
=
5 V
120
215
100
260
500
f
T
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz
MHz
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