參數資料
型號: BC857A-7
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
中文描述: 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數: 2/5頁
文件大?。?/td> 44K
代理商: BC857A-7
THERMAL DATA
R
thj-amb
R
thj-SR
Mountedon a ceramic substrate area = 10 x8 x 0.6mm
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
420
330
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= -30 V
V
CE
= -30 V
I
C
= -10
μ
A
for
BC857
for
BC858
T
amb
= 150
o
C
-15
-5
nA
μ
A
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
-50
-30
V
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -10
μ
A
for
BC857
for
BC858
-50
-30
V
V
I
C
= -2 mA
for
BC857
for
BC858
I
C
= -10
μ
A
for
BC857
for
BC858
-45
-30
V
V
-6
-5
V
V
I
C
= -10 mA
I
C
= -100 mA
I
B
= -0.5 mA
I
B
= -5 mA
-0.09
-0.25
-0.3
-0.65
V
V
I
C
= -10 mA
I
C
= -100 mA
I
B
= -0.5 mA
I
B
= -5 mA
-0.75
-0.9
V
V
V
BE(on)
Base-Emitter On
Voltage
I
C
= -2 mA
I
C
= -10 mA
I
C
= -10
μ
A
for
group A
for
group B
I
C
= -2 mA
for
group A
for
group B
V
CE
= -5 V
V
CE
= -5 V
-0.6
-0.66
-0.72
-0.75
-0.82
V
V
h
FE
DC Current Gain
V
CE
= -5 V
V
CE
= -5 V
110
200
90
150
180
290
220
450
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -5 V f = 100MHz
I
E
= 0
V
CB
= -10 V
150
MHz
C
CB
Collector Base
Noise Figure
f = 1 MHz
6
pF
NF
V
CE
= -5 V
f = 200 Hz
I
C
= -0.2 mA
R
G
= 2 K
f = 1KHz
2
1.2
10
4
dB
dB
Pulsed: Pulse duration = 300
μ
s, duty cycle
2 %
BC857/BC858
2/5
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