參數(shù)資料
型號: BC847F
廠商: NXP Semiconductors N.V.
英文描述: High Speed CMOS Logic 8-Bit Parallel-In/Serial-Out Shift Register 16-PDIP -55 to 125
中文描述: npn型通用晶體管
文件頁數(shù): 4/8頁
文件大?。?/td> 51K
代理商: BC847F
1999 May 18
4
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V
15
5
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC846AF; BC847AF; BC848AF
BC846BF; BC847BF; BC848BF
BC847CF; BC848CF
collector-emitter saturation voltage
110
200
420
580
100
220
450
800
200
400
700
770
1.5
10
V
CEsat
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
mV
mV
mV
mV
pF
MHz
dB
V
BE
base-emitter voltage
C
c
f
T
F
collector capacitance
transition frequency
noise figure
相關PDF資料
PDF描述
BC848CF NPN general purpose transistors
BC848F High Speed CMOS Logic Dual 4-Input AND Gate 14-SOIC -55 to 125
BC846F NPN Silicon Transistor (General purpose application Switching application)
BC847F High Speed CMOS Logic 8-Bit Parallel-In/Serial-Out Shift Register 16-PDIP -55 to 125
BC848F High Speed CMOS Logic Dual 4-Input AND Gate 14-SOIC -55 to 125
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