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參數(shù)資料
| 型號： | BC636 |
| 英文描述： | COMPLEMENTARY SILICON TRANSISTORS |
| 中文描述： | 互補硅晶體管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | BC636 |
1999 Apr 23
6
Philips Semiconductors
Product specification
PNP medium power transistors
BC636; BC638; BC640
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
相關PDF資料 |
PDF描述 |
|---|---|
| BC637 | NPN medium power transistors |
| BC639 | NPN medium power transistors |
| BC637 | COMPLEMENTARY SILICON TRANSISTORS |
| BC637-16 | NPN medium power transistors |
| BC639-10 | NPN medium power transistors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BC636 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC636,116 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC636 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP TO-92 |
| BC636/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Current Transistor PNP |
| BC636_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
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