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參數(shù)資料
| 型號(hào)： | BC559 |
| 英文描述： | PNP SILICON AF SMALL SIGNAL TRANSISTOR |
| 中文描述： | 進(jìn)步黨硅自動(dòng)對(duì)焦小信號(hào)晶體管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | BC559 |
1999 May 28
3
Philips Semiconductors
Product specification
PNP general purpose transistor
BC559
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
V
BEsat
decreases by about
1.7 mV/K with increasing temperature.
V
BE
decreases by about
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
420
600
TYP.
1
60
180
750
930
650
4
MAX.
15
4
100
800
300
650
750
820
4
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
2 mA; V
CE
=
5 V; see Fig.2
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA
I
C
=
10 mA; I
B
=
0.5 mA; note 1
I
C
=
100 mA; I
B
=
5 mA; note 1
I
C
=
2 mA; V
CE
=
5 V; note 2
I
C
=
10 mA; V
CE
=
5 V; note 2
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
E
=
10 mA; V
CB
=
5 V; f = 100 MHz 100
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 30 Hz to 15.7 kHz
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
nA
μ
A
nA
I
EBO
h
FE
V
CEsat
emitter cut-off current
DC current gain; BC559C
collector-emitter saturation
voltage
mV
mV
mV
mV
mV
mV
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
f
T
F
collector capacitance
transition frequency
noise figure; BC559C
4
dB
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|---|---|
| BC559 | Si-Epitaxial PlanarTransistors |
| BC559B | Si-Epitaxial PlanarTransistors |
| BC559C | Si-Epitaxial PlanarTransistors |
| BC559 | EPITAXIAL PLANAR PNP TRANSISTOR (LOW NOISE) |
| BC559 | Small Signal Transistors (PNP) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC559 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| BC559/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Noise Transistors |
| BC559_99 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| BC559_J35Z | 功能描述:兩極晶體管 - BJT PNP GEN PURP XTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC559_Q | 功能描述:兩極晶體管 - BJT TO-92 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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