參數(shù)資料
型號(hào)： BC177
英文描述： PNP SILICON PLANAR EPITAXIAL TRANSISTOR
中文描述： 進(jìn)步黨硅外延平面晶體管
文件頁(yè)數(shù)： 4/8頁(yè)
文件大小： 49K
代理商： BC177
1997 Jun 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
V
BE
decreases by about
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
125
TYP.
1
140
MAX.
15
10
50
500
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
20 V
I
E
= 0; V
CB
=
20 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
2 mA; V
CE
=
5 V
I
C
=
2 mA; V
CE
=
5 V
nA
μ
A
nA
I
EBO
h
FE
h
FE
emitter cut-off current
DC current gain
DC current gain
BC177A
BC177B
collector-emitter saturation voltage I
C
=
10 mA; I
B
=
0.5 mA
125
240
600
180
290
75
250
700
850
650
4
260
500
300
750
6
10
V
CEsat
mV
mV
mV
mV
mV
pF
MHz
dB
I
C
=
100 mA; I
B
=
5 mA
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA
I
C
=
2 mA; V
CE
=
5 V; note 1
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz 100
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
V
BEsat
base-emitter saturation voltage
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
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