參數(shù)資料
型號: BAS81
廠商: Vishay Intertechnology,Inc.
英文描述: Schottky Barrier Diodes
中文描述: 肖特基勢壘二極管
文件頁數(shù): 2/8頁
文件大小: 43K
代理商: BAS81
1998 Jun 24
2
Philips Semiconductors
Product specification
Schottky barrier diodes
BAS81; BAS82; BAS83
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed small SMD
package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges. This surface
mounted diode is encapsulated in a
hermetically sealed SOD80C glass
SMD package with tin-plated metal
discs at each end. It is suitable for
“automatic placement” and as such it
can withstand immersion soldering.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
handbook, halfpage
MAM190
k
a
Cathode indicated by a grey band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
BAS81
65
40
V
BAS82
50
V
BAS83
60
V
I
F
I
FRM
I
FSM
T
stg
T
j
continuous forward current
repetitive peak forward current
30
mA
t
p
1 s;
δ ≤
0.5
t
p
= 1 s
150
mA
non-repetitive peak forward current
500
mA
°
C
°
C
storage temperature
+150
junction temperature
125
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BAS81-GS08 功能描述:肖特基二極管與整流器 40 Volt 30mA 500 mA IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
BAS81-GS18 功能描述:肖特基二極管與整流器 40 Volt 30mA 500 mA IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel