- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385114 > BAS286-GS08 (VISHAY SEMICONDUCTORS) Diode Small Signal Schottky 50V 0.2A 2-Pin Quadro MELF SOD-80 T/R PDF資料下載
參數(shù)資料
| 型號(hào)： | BAS286-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Schottky 50V 0.2A 2-Pin Quadro MELF SOD-80 T/R |
| 中文描述： | Schottky (Diodes & Rectifiers) 60 Volt 200mA 5.0 Amp IFSM |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | BAS286-GS08 |
BAS286
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 09-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85502
Small Signal Schottky Diode
MECHANICAL DATA
Case:
QuadroMELF SOD-80
Weight:
approx. 34 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
Integrated
discharge
Very low forward voltage
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
protection
ring
against
static
APPLICATIONS
Applications where a very low forward voltage is required
PARTS TABLE
PART
BAS286
ORDERING CODE
BAS286-GS18 or BAS286-GS08
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
-
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
SYMBOL
V
R
I
FSM
I
FRM
I
F
I
FAV
VALUE
50
5
500
200
200
UNIT
V
A
mA
mA
mA
t
p
= 10 ms
t
p
1 s
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
R
thJA
320
K/W
Junction temperature
Storage temperature range
T
j
125
°C
°C
T
stg
- 65 to + 150
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
R
= 40 V
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
300
380
450
600
900
5
8
UNIT
mV
mV
mV
mV
mV
μA
pF
Forward voltage
Reserve current
Diode capacitance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BAS286 | Schottky Barrier Diode |
| BAS28 | DUAL, ISOLATED HIGH SPEED SWITCHING DIODE |
| BAS28 | High-speed double diode |
| BAS33 | Silicon Planar Diodes |
| BAS34 | Silicon Planar Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS286-GS18 | 功能描述:肖特基二極管與整流器 60 Volt 200mA 5.0 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| BAS28-7 | 功能描述:Diode Array 2 Independent Standard 85V 215mA (DC) Surface Mount TO-253-4, TO-253AA 制造商:diodes incorporated 系列:汽車級(jí)，AEC-Q101 包裝:剪切帶（CT） 零件狀態(tài):有效 二極管配置:2 個(gè)獨(dú)立式 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:85V 電流 - 平均整流（Io）（每二極管）:215mA（DC） 不同 If 時(shí)的電壓 - 正向（Vf）:1.25V @ 150mA 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:4ns 不同?Vr 時(shí)的電流 - 反向漏電流:1μA @ 75V 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應(yīng)商器件封裝:SOT-143 標(biāo)準(zhǔn)包裝:1 |
| BAS28E6327 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| BAS28E6327HTSA1 | 制造商:Infineon Technologies AG 功能描述:Diode Switching 85V 0.2A 4-Pin(3+Tab) SOT-143 T/R 制造商:Infineon Technologies AG 功能描述:AF DIODES - Tape and Reel 制造商:Infineon Technologies AG 功能描述:DIODE ARRAY 80V 200MA SOT143 |
| BAS28E6327XT | 制造商:Infineon Technologies 功能描述:Diode Switching 85V 0.2A 4-Pin(3+Tab) SOT-143 T/R |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。