參數(shù)資料
型號： BA679-GS18
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： DIODE SILICON, PIN DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, PIN Diode
中文描述： PIN Diodes 30 Volt 50mA 50nA IR @ 30V
文件頁數(shù)： 1/4頁
文件大?。?/td> 75K
代理商： BA679-GS18
BA679, BA679S
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 16-May-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85529
RF PIN Diodes - Single in MiniMELF SOD-80
FEATURES
Wide frequency range 10 MHz to 1 GHz
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
APPLICATIONS
Current
attenuators
controlled
HF
resistance
in
adjustable
MECHANICAL DATA
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE
DIFFERENTIATION
z
r
> 5 k
z
r
> 9 k
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
Single diode
Single diode
REMARKS
BA679
BA679S
BA679-GS18 or BA679-GS08
BA679S-GS18 or BA679S-GS08
-
-
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
TEST CONDITION
Reverse voltage
Forward continuous current
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
on PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
VALUE
UNIT
Thermal resistance junction to ambient air
R
thJA
500
K/W
Junction temperature
Storage temperature range
T
j
125
°C
°C
T
stg
- 55 to + 150
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 20 mA
Reverse current
V
R
= 30 V
Diode capacitance
f = 100 MHz, V
R
= 0 V
Differential forward resistance
f = 100 MHz, I
F
= 1.5 mA
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
z
r
MIN.
TYP.
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
k
μs
Reverse impedance
f = 100 MHz, V
R
= 0 V
BA679
BA679S
5
9
Minority carrier lifetime
I
F
= 10 mA, I
R
= 10 mA
4
相關(guān)PDF資料
PDF描述
BA679S-GS18 DIODE SILICON, PIN DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, PIN Diode
BA679S-GS08 DIODE SILICON, PIN DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, PIN Diode
BA682-GS08 DIODE SILICON, VHF BAND, MIXER DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, Microwave Mixer Diode
BA683-GS08 DIODE SILICON, VHF BAND, MIXER DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, Microwave Mixer Diode
BA683-GS18 DIODE SILICON, VHF BAND, MIXER DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, Microwave Mixer Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BA679-GS18-E3 制造商:Vishay Intertechnologies 功能描述:10 MHz to 1 GHz 0.5 pF Surface Mount RF PIN Diode - SOD-80
BA679-M-08 功能描述:RF Diode PIN - Single 30V 50mA SOD-80 MiniMELF 制造商:vishay semiconductor diodes division 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 二極管類型:PIN - 單 電壓 - 峰值反向（最大值）:30V 電流 - 最大值:50mA 不同?Vr，F(xiàn) 時的電容:0.5pF @ 0V，100MHz 不同?If，F(xiàn) 時的電阻:50 歐姆 @ 1.5mA，100MHz 功率耗散（最大值）:- 封裝/外殼:DO-213AC, MINI-MELF, SOD-80 供應(yīng)商器件封裝:SOD-80 MiniMELF 標準包裝:2,500
BA679-M-18 功能描述:RF Diode SOD-80 MiniMELF 制造商:vishay semiconductor diodes division 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 二極管類型:- 電壓 - 峰值反向（最大值）:- 電流 - 最大值:- 不同?Vr，F(xiàn) 時的電容:- 不同?If，F(xiàn) 時的電阻:- 功率耗散（最大值）:- 封裝/外殼:DO-213AC, MINI-MELF, SOD-80 供應(yīng)商器件封裝:SOD-80 MiniMELF 標準包裝:10,000
BA679S 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Diodes
BA679SGS08 制造商:Temic / Atmel Wireless and Microcontrollers 功能描述:PIN DIODE, DO-213AA
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