參數(shù)資料
型號: BA683-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: DIODE SILICON, VHF BAND, MIXER DIODE, DO-213AA, ROHS COMPLIANT, GLASS, MINIMELF-2, Microwave Mixer Diode
中文描述: Diodes (General Purpose, Power, Switching) 35 Volt 100mA Band
文件頁數(shù): 1/3頁
文件大?。?/td> 222K
代理商: BA683-GS18
BA682, BA683
Vishay Semiconductors
www.vishay.com
Rev. 1.6, 04-Mar-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85530
Band Switching Diodes
MECHANICAL DATA
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
Silicon planar diodes
Low dynamic forward resistance
Low diode capacitance
High reverse impedance
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
APPLICATIONS
Band switching in VHF-tuners
Note
(1)
T
amb
= 25 °C, unless otherwise specified
Note
(1)
T
amb
= 25 °C, unless otherwise specified
Note
(1)
T
amb
= 25 °C, unless otherwise specified
94 9371
PARTS TABLE
PART
BA682
BA683
TYPE DIFFERENTIATION
V
R
= 35 V, r
f
at I
F
3 mA = max. 0.7
V
R
= 35 V, r
f
at I
F
3 mA = max. 1.2
ORDERING CODE
BA682-GS18 or BA682-GS08
BA683-GS18 or BA683-GS08
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
Reverse voltage
Forward continuous current
TEST CONDITIONS
SYMBOL
V
R
I
F
VALUE
35
100
UNIT
V
mA
THERMAL CHARACTERISTICS
(1)
PARAMETER
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
VALUE
UNIT
Junction to ambient air
R
thJA
500
K/W
Junction temperature
Storage temperature range
T
j
150
°C
°C
T
stg
- 55 to + 150
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER
Forward voltage
Reverse current
TEST CONDITION
I
F
= 100 mA
V
R
= 20 V
f = 100 MHz, V
R
= 1 V
PART
SYMBOL
V
F
I
R
C
D1
C
D2
C
D2
r
f1
r
f1
r
f2
r
f2
MIN.
TYP.
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
Diode capacitance
f = 100 MHz, V
R
= 3 V
BA682
BA683
BA682
BA683
BA682
BA683
Dynamic forward resistance
f = 200 MHz, I
F
= 3 mA
f = 200 MHz, I
F
= 10 mA
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