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參數(shù)資料
| 型號(hào)： | BA479S-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE SILICON, PIN DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, PIN Diode |
| 中文描述： | PIN Diodes 30 Volt 9kohm |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 70K |
| 代理商： | BA479S-TR |
BA479G, BA479S
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85527
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 2 -
Differential Forward Resistance vs. Forward Current
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f
2
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35
0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
2.0
95 9735
I
w
a
u
r
F
V
F
- For
w
ard
V
oltage (
V
)
T
amb
= 25 °C
Scattering Limit
0.001
0.01
0.1
1
1
10
100
1000
10 000
10
95 9734
I
F
- For
w
ard C
u
rrent (mA)
f > 20 MHz
T
j
= 25 °C
r
f
w
a
Ω
)
- 80
- 60
- 40
- 20
0
20
a
u
l
f
2
, mod
u
lated
w
ith 200 kHz, m = 100 % (MHz)
80
60
40
20
0
95 9733
- Circ
u
it
w
ith 10 dB Atten
u
ation
V
0
= 40 dBm
V
f
1
= 100 MHz
u
nmod
u
lated
Π
94 9366
Re
v
. 6 - Date: 19. December 2011
Doc
u
ment no.: SB-
V
-3906.04-031(4)
26 min. [1.024]
3.9 max. [0.154]
26 min. [1.024]
Cathode Identification
1
1
3.1 min. [0.120]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BA479G-TR | DIODE SILICON, PIN DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, PIN Diode |
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| BA479G | Silicon PIN Diodes |
| BA479S | Silicon PIN Diodes |
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