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參數(shù)資料
| 型號： | BA479G-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE SILICON, PIN DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, PIN Diode |
| 中文描述： | PIN Diodes 30 Volt 4kohm |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 70K |
| 代理商： | BA479G-TR |
BA479G, BA479S
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85527
RF PIN Diodes - Single in DO-35
MECHANICAL DATA
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Wide frequency range 10 MHz to 1 GHz
AEC-Q101 qualified
Material categorization:
For definitions of compliance please see
www.vishay.com/doc99912
APPLICATIONS
Current
attenuators
controlled
HF
resistance
in
adjustable
PARTS TABLE
PART
TYPE
DIFFERENTIATION
V
R
= 30 V, z
r
> 5 k
V
R
= 30 V, z
r
> 9 k
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
Single diode
Single diode
REMARKS
BA479G
BA479S
BA479G-TR or BA479G-TAP
BA479S-TR or BA479S-TAP
BA479G
BA479S
Tape and reel/ammopack
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
TEST CONDITION
Reverse voltage
Forward continuous current
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
l = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
350
125
- 55 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
I
F
= 20 mA
Reverse current
V
R
= 30 V
Diode capacitance
f = 100 MHz, V
R
= 0 V
Differential forward resistance
f = 100 MHz, I
F
= 1.5 mA
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
z
r
MIN.
TYP.
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
k
μs
Reverse impedance
f = 100 MHz, V
R
= 0 V
BA479G
BA479S
5
9
Minority carrier lifetime
I
F
= 10 mA, I
R
= 10 mA
4
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| BA479S | Silicon PIN Diodes |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BA479S | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:RF PIN Diodes - Single in DO-35 |
| BA479S-TAP | 功能描述:PIN 二極管 30 Volt 9kohm RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| BA479S-TR | 功能描述:PIN 二極管 30 Volt 9kohm RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel |
| BA481 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF mixer diode |
| BA482 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Band-switching diodes |
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