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參數(shù)資料
| 型號： | BA318 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High-speed diodes |
| 中文描述： | 0.1 A, 60 V, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 39K |
| 代理商： | BA318 |
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
see Fig.5
V
R
= 10 V
V
R
= 10 V; T
j
= 150
°
C
V
R
= 10 V
V
R
= 30 V
V
R
= 30 V; T
j
= 150
°
C
V
R
= 30 V
V
R
= 50 V
V
R
= 50 V; T
j
= 150
°
C
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 50 mA;
t
r
= 20 ns; see Fig.8
700
850
1100
mV
mV
mV
I
R
reverse current
BA316
200
100
50
200
100
50
200
100
nA
μ
A
nA
nA
μ
A
nA
nA
μ
A
pF
ns
BA317
BA318
C
d
t
rr
diode capacitance
reverse recovery time
2
4
V
fr
forward recovery voltage
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length 10 mm
lead length 10 mm; note 1
240
500
K/W
K/W
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