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參數(shù)資料
| 型號(hào)： | BA318 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High-speed diodes |
| 中文描述： | 0.1 A, 60 V, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 39K |
| 代理商： | BA318 |
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
General application
Continuous reverse voltage: 10 V,
30 V, 50 V
Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BA316
BA317
BA318
continuous reverse voltage
BA316
BA317
BA318
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
15
40
60
V
V
V
V
R
10
30
50
V
V
V
mA
mA
I
F
I
FRM
I
FSM
see Fig.2; note 1
100
225
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 1 ms
t = 1 s
T
amb
= 25
°
C; note 1
4
1
0.5
A
A
A
mW
°
C
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
350
+200
200
65
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