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參數(shù)資料
| 型號： | B6U104NRR |
| 英文描述： | Bridge Rectifier · AC-Switches |
| 中文描述： | 橋式整流器· AC開關 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 119K |
| 代理商： | B6U104NRR |
Technische Information / Technical Information
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT
DD B6U 100 N 12...16 RR
Elektrische Eigenschaften / Electrical properties
Vorlufige Daten
Preliminary data
Hchstzulssige Werte / Maximum rated values
Netz-Diode / Rectifier diode
Periodische Spitzensperrspannung
repetitive peak reverse voltage
T
vj
= - 40°C...T
vj max
V
RRM
1200, 1400
V
1600
Durchlastrom-Grenzeffektivwert (pro Element)
RMS forward current (per chip)
I
FRMSM
60
A
Ausgangsstrom
output current
T
C
= 100°C
T
C
= 97°C
I
d
100
104
A
A
Stostrom-Grenzwert
surge forward current
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
I
FSM
650
550
A
A
Grenzlastintegral
I2t-value
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
I2t
2100
1500
A2s
A2s
IGBT
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
I
C
50
A
Periodischer Kollektor-Spitzenstrom
repetitive peak collektor current
t
p
= 1ms
I
CRM
100
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25°C
P
tot
350
W
Gate-Emitter Spitzenspannung
gate-emitter peak voltage
V
GE
± 20
V
Schnelle Diode / Fast diode
Dauergleichstrom
DC forward current
I
F
25
A
Periodischer Spitzenstrom
repetitive peak forward current
t
p
= 1ms
I
FRM
50
A
Modul
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50Hz, t = 1min
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Netz-Diode / Rectifier diode
min. typ.
max.
Durchlaspannung
forward voltage
T
vj
= T
vj max
, i
F
= 100A
v
F
1,55
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,75
V
Ersatzwiderstand
forward slope resistance
T
vj
= T
vj max
r
T
5,5
m
Sperrstrom
reverse current
T
vj
= T
vj max,
v
R =
V
RRM
i
R
5
mA
IGBT
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
T
vj
= 25°C, i
C
= 50A, v
GE
= 20V
T
vj
= 125°C, i
C
= 50A, v
GE
= 20V
v
CE sat
2,5
3,1
3,2
V
Gate-Emitter-Schwellspannung
gate-emitter threshold voltage
T
vj
= 25°C, i
C
= 2mA, v
GE
= v
CE
v
GE(TO)
4,5
5,5
6,5
V
SDB-MA2; R. Jrke
29. Okt 99
A 105/97
Seite/page 1(3)
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