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參數(shù)資料
| 型號(hào)： | B6U134NRRTARGET |
| 英文描述： | Bridge Rectifier · AC-Switches |
| 中文描述： | 橋式整流器· AC開關(guān) |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | B6U134NRRTARGET |
Technische Information / Technical Information
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT
DD B6U 134 N 16 RR
N
B6
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Gleichrichterdiode / Rectifierdiode
Periodische Spitzensperrspannung
repetitive peak reverse voltage
T
vj
= - 40°C...T
vj max
V
RRM
1600
V
Durchlastrom-Grenzeffektivwert (pro Element)
RMS forward current (per chip)
I
FRMSM
80
A
Ausgangsstrom
output current
T
C
= 100°C
I
d
134
A
Stostrom-Grenzwert
surge forward current
T
vj
= 25°C, t
p
= 10ms
I
FSM
650
550
A
A
T
vj
= T
vj max
, t
p
= 10ms
Grenzlastintegral
I2t-value
T
vj
= 25°C, t
p
= 10ms
I2t
2100
1500
A2s
A2s
T
vj
= T
vj max
, t
p
= 10ms
IGBT
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80°C
I
C
70
A
Periodischer Kollektor-Spitzenstrom
repetitive peak collektor current
t
p
= 1ms, T
C
= 80°C
I
CRM
150
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25°C
P
tot
500
W
Gate-Emitter Spitzenspannung
gate-emitter peak voltage
V
GE
± 20
V
Schnelle Diode / Fast diode
Periodische Spitzensperrspannung
repetitive peak reverse voltage
V
RRM
1200
V
Dauergleichstrom
DC forward current
T
C
= 80°C
I
F
35
A
Periodischer Spitzenstrom
repetitive peak forward current
t
p
= 1ms
I
FRM
70
A
Modul
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50Hz, t = 1min
V
ISOL
2,5
kV
NTC connected to baseplate
Charakteristische Werte / Characteristic values
Gleichrichterdiode / Rectifierdiode
min.
typ.
max.
Durchlaspannung
forward voltage
T
vj
= T
vj max
, i
F
= 100A
v
F
1,35
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,75
V
Ersatzwiderstand
forward slope resistance
T
vj
= T
vj max
r
T
6,3
m
Sperrstrom
reverse current
T
vj
= T
vj max,
v
R =
V
RRM
i
R
5
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
AA`+KK`
1
m
prepared by: Ralf Jrke
approved by: Lothar Kleber
date of publication: 13.12.2000
revision: 1
BIP AM; R. Jrke
19. Dez 00
A 34/00
Seite/page 1(12)
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