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參數(shù)資料
| 型號(hào)： | AWT6280RM11P9 |
| 廠商： | ANADIGICS INC |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 7 X 7 MM, 1 MM HEIGHT, ROHS COMPLIANT PACKAGE-18 |
| 文件頁(yè)數(shù)： | 12/16頁(yè) |
| 文件大小： | 583K |
| 代理商： | AWT6280RM11P9 |
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aWt6280
Data Sheet - Rev 2.1
11/2008
table 6: electrical Characteristics for GsM850 GMsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 s, Duty = 25%,
ZIN = ZOUT = 50 , tC = 25 °C, VRAMP = 1.6 V, Bs = LOW, tX_eN = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
COMMeNts
Operating Frequency ( FIN )
824
-
849
MHz
Input Power (PIN)
0
3
5
dBm
Output Power (PMAX)
34.5
35.3
-
dBm
Freq = 824 to 849 MHz
Degraded Output Power
(POUT)
32.5
33.5
-
dBm
VBATT = 3.0 V, TC = 85 °C
PIN = 0 dBm
PAE @ PMAX
48
53
-
%
Freq = 824 to 849 MHz
Forward Isolation 1
-
-42
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
Forward Isolation 2
-
-26
-20
dBm
TX_EN = HIGH ,VRAMP = 0.2 V
PIN = 5 dBm
Cross Isolation
(2Fo, 3Fo @ DCS/PCS port)
-
-33
-20
dBm
POUT < 34.5 dBm
Second Harmonic
-
-23
-15
dBm
POUT < 34.5 dBm
Third Harmonic
-
-42
-20
dBm
POUT < 34.5 dBm
n * fo (n > 4), Fo 12.75
GHz
-
-30
-10
dBm
POUT < 34.5 dBm
Stability
VSWR = 6:1 All Phases , POUT < 34.5 dBm
-
-36
dBm
FOUT < 1 GHz
-
-30
dBm
FOUT > 1 GHz
Ruggedness
No Permanent Degradation
VSWR 10:1, All Phase Angles
POUT < 34.5 dBm
RX Noise Power
-
-86
-84
dBm
FTX = 849 MHz, RBW = 100 kHz,
FRX = 869 to 894 MHz, POUT < 34.5 dBm
Input Return Loss
-
1.5:1
2.5:1
VSWR POUT < 34.5 dBm
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