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參數(shù)資料
| 型號(hào)： | AWT6280RM11P9 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 7 X 7 MM, 1 MM HEIGHT, ROHS COMPLIANT PACKAGE-18 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 583K |
| 代理商： | AWT6280RM11P9 |
4
aWt6280
Data Sheet - Rev 2.1
11/2008
table 4: Digital Inputs
table 5: Logic Control table
table 3: Operating Conditions
the device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
ParaMeter
MIN tYP MaX uNIts
COMMeNts
Case temperature (TC)
-20
-
85
°C
Supply voltage (VBATT)
3.0
3.5
4.8
V
Power supply leakage current
-
1
10
A
VBATT = 4.8 V, VRAMP = 0 V,
TX_EN = LOW
No RF applied
Control Voltage Range
0.2
-
1.6
V
Turn on Time (TON)
-
1
s
VRAMP = 0.2 V, TX_EN = LOW
Y HIGH
PIN = 5 dB
Turn Off Time (TOFF)
-
1
s
VRAMP = 0.2 V, TX_EN = LOW
Y HIGH
PIN = 5 dB
Rise Time (TRISE)
-
1
s
POUT = -10 dBm
Y PMAX (within0.2 dB)
Fall Time (TFALL)
-
1
s
POUT = PMAX
Y -10 dBm(within0.2 dB)
VRAMP Input Capacitance
-
3
-
pF
VRAMP Input Current
-
10
A
Duty Cycle
-
50
%
ParaMeter
sYMBOL
MIN tYP MaX uNIts
Logic High Voltage
VIH
1.2
-
3.0
V
Logic Low Voltage
VIL
-
0.5
V
Logic High Current
|IIH|
-
30
A
Logic Low Current
|IIL|
-
30
A
OPeratIONaL MODe
Bs
tX_eN
GSM850/900
LOW
HIGH
DCS/PCS
HIGH
PA DISABLED
-
LOW
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