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參數(shù)資料
| 型號(hào)： | AWT6123 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 衰減器 |
| 英文描述： | GSM850/GSM900/DCS/PCS Quad Band Power Amplifier |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 6 X 8 MM, SMT, 22 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 213K |
| 代理商： | AWT6123 |
4
Advanced Product Information - Rev 0.7
02-2003
AWT6123
Table 4: Electrical Characteristics for GSM850/900
Unless otherwise specified:V
CC
= 3.5V, P
IN
= 5.5dBm, V
REG_GSM
= 2.8V, V
APC_GSM
= 2.2V, Z
IN
= Z
OUT
= 50
, T
C
= 25 °C
V
REG_DCS/PCS
= V
APC_DCS/PCS
= 0V, Pulse Width =1154
μ
s
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
F
IN
824
880
849
915
MHz
MHz
Input Power
P
IN
3
5.5
8
dBm
GSM850 Band (824 to 849MHz)
Output Power
P
MAX
34.5
35
dBm
Efficiency GSM850 Class 4
PAE
P
OUT
= P
MAX
45
50
%
Efficiency GSM850 Class 5
PAE
P
OUT
= 31.5dBm
35
%
Degraded Output Power
V
CC
= 3.0V, V
REG
= 2.7V,
T
C
= 85°C, P
IN
= 3dBm
32.5
dBm
GSM900 Band (880 to 915MHz)
Output Power
P
MAX
34.5
35
dBm
Efficiency GSM900 Class 4
PAE
P
OUT
= P
MAX
50
55
%
Degraded Output Power
V
CC
= 3.0V, V
REG
= 2.7V,
T
C
= 85°C, P
IN
= 3dBm
32.5
dBm
All Bands
Isolation
V
APC
= 0.45V, P
IN
= 8dBm
-35
-30
dBm
Cross Isolation
2*F
IN
at DCS/PCS_OUT
port, DCS/PCS PA = OFF
-20
dBm
Harmonics (2-14F)
V
APC
= 0.45 to 2.2V
-12
-7
dBm
Stability
All V
APC
, All V
CC
, All V
REG
,
T
C
= -20 to 85°C,
VSWR = 8:1 All phases
-36
dBm
Ruggedness
All V
APC
, All V
CC
, All V
REG
,
T
C
= -20 to 85°C, All phases
10:1
ratio
RX Band Noise Power
RBW=VBW=100kHz,
P
IN
= 3.0 to 8dBm,
F
IN
= 915MHz,
F
OUT
= F
IN
+ 10 to 20MHz
-70
dBm
RBW=VBW=100kHz,
P
IN
= 3.0 to 8dBm,
F
IN
= 849 or 915MHz,
F
OUT
= F
IN
+ 20 to 45MHz
-82
dBm
Input Return Loss
P
OUT
= 5dBm to P
MAX
2.5:1
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