參數(shù)資料
型號(hào): AWT6123
廠商: ANADIGICS INC
元件分類: 衰減器
英文描述: GSM850/GSM900/DCS/PCS Quad Band Power Amplifier
中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: 6 X 8 MM, SMT, 22 PIN
文件頁數(shù): 2/10頁
文件大?。?/td> 213K
代理商: AWT6123
2
Advanced Product Information - Rev 0.7
02-2003
AWT6123
PARAMETER
MIN
MAX
UNITS
Supply Voltage (V
CC
)
+7
V
RF Input Power (RF
IN
)
+14
dBm
Control Voltage (V
APC
)
3.0
V
Storage Temperature (T
STG
)
-55
150
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure to
absolute ratings for extended periods of time may adversely affect
reliability.
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Maximum Ratings
Table 2: ESD Ratings
PARAMETER
METHOD
RATING
UNITS
ESD threshold voltage (RF ports)
HBM
250
V
ESD threshold voltage (control inputs)
HBM
250
V
ESD threshold voltage (RF inputs)
CDM
TBD
V
ESD threshold voltage (control inputs)
CDM
TBD
V
Table 3: Operating Conditions
Note 1: The V
APC
must be pulled down to 0.45V with a low impedance. If V
REG_GSM
& V
REG_DCS/PCS
inputs
are connected then both V
APC
inputs must be pulled down to 0.45V to disable both power amplifiers.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supply voltage (V
CC
)
3.0
3.5
4.2
V
Regulated voltage (V
REG
)
2.7
2.8
3.0
V
Individual Regulated current (I
REG
)
V
REG_GSM
or V
REG_DCS/PCS
= 3.0V
3.5
4.5
mA
Control voltage (V
APC
)
0.45
V
REG
V
Control Voltage (V
APC
) for max power
1.8
2.2
V
Individual Control current (I
APC
)
See Note 1
V
APC
= 0.45V
-3
mA
V
APC
= 2.2V
3
mA
V
APC
= 3.0V
6
mA
Leakage current
V
CC
= 4.2V, No RF Applied
V
REG_GSM
= V
REG_DCS/PCS
= 0V
0
10
A
μ
Case temperature (T
C
)
-20
85
°C
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