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參數(shù)資料
| 型號： | AV2001 |
| 廠商： | Avic Technology |
| 英文描述： | TO-92 Plastic-Encapsulate Transistors |
| 中文描述： | 至92塑料封裝晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 486K |
| 代理商： | AV2001 |
@vic
AV2001
TO-92 Plastic-Encapsulate Transistors
AV2001
TRANSISTORNPN
FEATURES
Power dissipation
P
CM
: 0.6 W
Collector current
I
CM
: 0.7 A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=1
μA
I
E
=0
30
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=10mA , I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100μA
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=30 V , I
E
=0
0.1
μA
Collector cut-off current
I
CEO
V
CE
=20 V , I
B
=0
0.1
μA
Emitter cut-off current
I
EBO
V
EB
=5 V , I
C
=0
0.1
μA
DC current gain
h
FE
V
CE
=1V, I
C
=100mA
90
400
Collector-emitter saturation voltage
V
CE(sat)
I
C
=700mA, I
B
= 70mA
0.6
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 700mA, I
B
=70mA
1.2
V
Transition frequency
f
T
V
CE
=6V, I
C
= 10mA
f =
30MHz
50
MHz
CLASSIFICATION OF h
FE
Rank
M
L
K
Range
90-180
135-270
200-400
1
2
3
TO
92
1. EMITTER
2. COLLECTOR
3. BASE
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