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參數(shù)資料
| 型號： | AV2222 |
| 廠商： | Avic Technology |
| 英文描述： | Amplifier Transistors PN Silicon |
| 中文描述： | 硅晶體管放大器生產(chǎn)通知書 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | AV2222 |
Copyright @vic Electronics Corp. 1 Website: http://www.avictek.com
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
40
Vdc
Collector–Base Voltage
75
Vdc
Emitter–Base Voltage
6.
5
Vdc
Collector Current — Continuous
600
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
75
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ICEX
—
10
nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150
°
C)
ICBO
—
—
0.01
10
μ
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
10
nAdc
Collector Cutoff Current
(VCE = 10 V)
ICEO
—
10
nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
IBEX
—
20
nAdc
AV
2222
@vic
TO–92
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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