- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42912 > AUIRLS4030TRL 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF資料下載
參數(shù)資料
| 型號： | AUIRLS4030TRL |
| 元件分類： | JFETs |
| 英文描述： | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 286K |
| 代理商： | AUIRLS4030TRL |
AUIRLS/SL4030
2
www.irf.com
Coss eff. (TR) is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
RθJC value shown is at time zero.
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.10
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.4
4.3
mΩ
–––
3.6
4.5
VGS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
gfs
Forward Transconductance
320
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
RG(int)
Internal Gate Resistance
–––
2.1
–––
Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
87
130
Qgs
Gate-to-Source Charge
–––
27
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
45
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
42
–––
td(on)
Turn-On Delay Time
–––
74
–––
tr
Rise Time
–––
330
–––
td(off)
Turn-Off Delay Time
–––
110
–––
tf
Fall Time
–––
170
–––
Ciss
Input Capacitance
––– 11360 –––
Coss
Output Capacitance
–––
670
–––
Crss
Reverse Transfer Capacitance
–––
290
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
–––
760
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
1140
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
50
–––
TJ = 25°C
VR = 85V,
–––
60
–––
TJ = 125°C
IF = 110A
Qrr
Reverse Recovery Charge
–––
88
–––
TJ = 25°C
di/dt = 100A/μs
f
–––
130
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
3.3
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 4.5V, ID = 92A f
ns
nC
180
730
μA
nA
nC
ns
pF
A
–––
ID = 110A
RG = 2.7Ω
VGS = 4.5V f
VDD = 65V
ID = 110A, VDS =0V, VGS = 4.5V
TJ = 25°C, IS = 110A, VGS = 0V f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 110A f
VDS = VGS, ID = 250μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 50V
Conditions
VGS = 4.5V f
VGS = 0V
VDS = 50V
= 1.0MHz
VGS = 0V, VDS = 0V to 80V h
VGS = 0V, VDS = 0V to 80V g
Conditions
VDS = 25V, ID = 110A
ID = 110A
VGS = 16V
VGS = -16V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.05mH, RG = 25Ω,
IAS = 110A, VGS =10V. Part not recommended for use above
this value .
ISD ≤ 110A, di/dt ≤ 1330A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRLSL4030 | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRLS4030TRR | 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AWSCR-FREQ-MGS-C15-T | CERAMIC RESONATOR, 2 MHz - 8 MHz |
| AWSCR-FREQ-MGD-C15 | CERAMIC RESONATOR, 2 MHz - 8 MHz |
| AWSCR-FREQ1MS-T | CERAMIC RESONATOR, 8 MHz - 13 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRLS4030TRR | 功能描述:MOSFET 100V 180A 4.3 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLS8409-7P | 功能描述:MOSFET NCH 40V 240A D2PAK 制造商:infineon technologies 系列:汽車級，AEC-Q101，HEXFET? 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時）:240A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:0.75 毫歐 @ 100A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:266nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:16488pF @ 25V 功率 - 最大值:375W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-7，D2Pak（6 引線+接片） 供應(yīng)商器件封裝:D2PAK（7-Lead） 標(biāo)準包裝:50 |
| AUIRLS8409-7TRL | 功能描述:MOSFET NCH 40V 240A D2PAK 制造商:infineon technologies 系列:* 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時）:240A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:0.75 毫歐 @ 100A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:266nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:16488pF @ 25V 功率 - 最大值:375W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-263-7，D2Pak（6 引線+接片） 供應(yīng)商器件封裝:D2PAK（7-Lead） 標(biāo)準包裝:800 |
| AUIRLSL3036 | 功能描述:MOSFET 60V 270A 2.4 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRLU024N | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Planar Technology Low On-Resistance Fully Avalanche Rated |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。