參數(shù)資料
型號(hào): AUIRLS3036TRR
元件分類(lèi): JFETs
英文描述: 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 236K
代理商: AUIRLS3036TRR
AUIRLS3036
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
55
60
65
70
75
V
(B
R
)D
S
,D
ra
in
-t
o-
S
ou
rc
e
B
re
ak
do
w
n
V
ol
ta
ge
(V
)
Id = 5mA
-10
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
ne
rg
y
J)
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
27A
50A
BOTTOM 165A
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
I D
,
D
ra
in
C
ur
re
nt
(A
)
Limited By Package
0
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
Limited by
package
相關(guān)PDF資料
PDF描述
AUIRLS4030-7P 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRLS4030-7TRR 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRLS4030-7TRL 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRLS4030 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRLS4030TRL 180 A, 100 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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