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參數(shù)資料
| 型號： | AUIRLS3036TRR |
| 元件分類： | JFETs |
| 英文描述： | 195 A, 60 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 236K |
| 代理商： | AUIRLS3036TRR |
08/23/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
PD - 97718
AUIRLS3036
VDSS
60V
RDS(on) typ.
1.9m
Ω
max.
2.4m
Ω
ID (Silicon Limited)
270A
c
ID (Package Limited)
195A
GD
S
Gate
Drain
Source
D2Pak
AUIRLS3036
GD
S
D
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design
are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Features
●
Advanced Process Technology
●
Ultra Low On-Resistance
●
Dynamic dv/dt Rating
●
175°C Operating Temperature
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
IAR
Avalanche Current d
A
EAR
Repetitive Avalanche Energy l
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case k
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state) j
–––
40
300
Max.
270
c
190
1100
195
290
See Fig. 14, 15, 22a, 22b
A
°C
380
8.0
±16
2.5
-55 to + 175
11
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| AUIRLS4030-7P | 190 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| AUIRLS3114ZTRR | 功能描述:MOSFET 40V 42A 4.9 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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