參數(shù)資料
型號: AUIRL3705ZSTRL
元件分類: JFETs
英文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù): 1/15頁
文件大?。?/td> 378K
代理商: AUIRL3705ZSTRL
12/09/10
www.irf.com
1
HEXFET Power MOSFET
S
D
G
AUIRL3705Z
AUIRL3705ZS
AUIRL3705ZL
D2Pak
AUIRL3705ZS
TO-220AB
AUIRL3705Z
TO-262
AUIRL3705ZL
GD
S
Gate
Drain
Source
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Features
l
Logic Level
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
55V
RDS(on) typ.
6.5m
max.
8.0m
ID (Silicon Limited)
86Al
ID (Package Limited) 75A
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy(Thermally limited)
d
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
1.14
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
°C/W
A
mJ
°C
180
120
See Fig.12a, 12b, 15, 16
130
0.88
± 16
Max.
86
l
61
340
75
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
PD - 96345
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