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參數(shù)資料
| 型號： | AUIRL3705ZL |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 378K |
| 代理商： | AUIRL3705ZL |
AUIRL3705Z/S/L
2
www.irf.com
S
D
G
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.09mH
RG = 25
, IAS = 52A, VGS =10V. Part not recommended for use
above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
Notes:
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.055
–––
V/°C
–––
6.5
8.0
RDS(on)
Static Drain-to-Source On-Resistance
–––
11
–––
12
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
150
–––
V
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
40
60
Qgs
Gate-to-Source Charge
–––12–––
Qgd
Gate-to-Drain ("Miller") Charge
–––21–––
td(on)
Turn-On Delay Time
–––17–––
tr
Rise Time
–––
240
–––
td(off)
Turn-Off Delay Time
–––26–––
tf
Fall Time
–––83–––
LD
Internal Drain Inductance
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
2880
–––
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
220
–––
Coss
Output Capacitance
–––
1500
–––
Coss
Output Capacitance
–––
330
–––
Coss eff.
Effective Output Capacitance
–––
510
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
16
24
ns
Qrr
Reverse Recovery Charge–––
7.4
11
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
75
340
–––
ns
nH
pF
A
m
A
nA
nC
–––
4.5
–––
7.5
VGS = 5.0V, ID = 43A
e
VDS = 25V, ID = 52A
ID = 43A
VDS = 44V
VGS = 16V
VGS = -16V
VGS = 4.5V, ID = 30A
e
Conditions
VGS = 5.0V
e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 52A, VGS = 0V e
TJ = 25°C, IF = 43A, VDD = 28V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 52A
e
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 5.0V e
VDD = 28V
ID = 43A
RG = 4.3
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