參數(shù)資料
型號: AUIRGP35B60PD-E
元件分類: IGBT 晶體管
英文描述: 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 5/13頁
文件大?。?/td> 395K
代理商: AUIRGP35B60PD-E
AUIRGP35B60PD-E
www.irf.com
13
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
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相關(guān)PDF資料
PDF描述
AUIRGP50B60PD1 60 A, 600 V, N-CHANNEL IGBT, TO-247AC
AVT-51663-BLKG 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AVT-51663-TR1G 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AWE6159RM46P8 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
AWL6153M7UQ1 2400 MHz - 2485 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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AUIRGP4062D-E 功能描述:IGBT 晶體管 600V Auto UltraFast Copack Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
AUIRGP4063D 功能描述:IGBT 晶體管 600V CO-PACKAUTO TRENCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube