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參數(shù)資料
| 型號(hào)： | AUIRFSL4410Z |
| 元件分類： | JFETs |
| 英文描述： | 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 286K |
| 代理商： | AUIRFSL4410Z |
08/17/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
D2Pak
AUIRFS4410Z
TO-262
AUIRFSL4410Z
AUIRFS4410Z
AUIRFSL4410Z
GD
S
Gate
Drain
Source
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
VDSS
100V
RDS(on) typ.
7.2m
Ω
max.
9.0mΩ
ID
97A
PD - 96405
S
D
G
D
S
D
G
D
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
EAS (Thermally limited)
Single Pulse Avalanche Energy d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy f
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.65
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
i
–––
40
°C/W
230
16
-55 to + 175
± 20
1.5
°C
300
Max.
97
69
390
242
See Fig. 14, 15, 22a, 22b,
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