參數(shù)資料
型號： AUIRFS4410Z
元件分類： JFETs
英文描述： 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù)： 1/12頁
文件大小： 286K
代理商： AUIRFS4410Z
08/17/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
D2Pak
AUIRFS4410Z
TO-262
AUIRFSL4410Z
AUIRFS4410Z
AUIRFSL4410Z
GD
S
Gate
Drain
Source
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
VDSS
100V
RDS(on) typ.
7.2m
Ω
max.
9.0mΩ
ID
97A
PD - 96405
S
D
G
D
S
D
G
D
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
EAS (Thermally limited)
Single Pulse Avalanche Energy d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy f
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.65
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
i
–––
40
°C/W
230
16
-55 to + 175
± 20
1.5
°C
300
Max.
97
69
390
242
See Fig. 14, 15, 22a, 22b,
相關(guān)PDF資料
PDF描述
AUIRFU024N 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
AUIRFR024NTR 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR024N 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR024NTRR 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR024NTRL 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRFS4410ZTRL 功能描述:MOSFET 100V 97A 9mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFS4410ZTRR 功能描述:MOSFET 100V 97A 9mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFS4610 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFS4610STRL 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE GRADE
AUIRFS4610STRR 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE GRADE
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