參數(shù)資料
型號(hào)： AUIRFR9024NTRR
元件分類： JFETs
英文描述： 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁(yè)數(shù)： 6/13頁(yè)
文件大小： 1080K
代理商： AUIRFR9024NTRR
AUIRFR/U9024N
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 2.8mH
RG = 25, IAS = -6.6A (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ -240A/s, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
-0.05
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.175
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
2.5
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-25
A
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
19
Qgs
Gate-to-Source Charge
–––
5.1
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
10
td(on)
Turn-On Delay Time
–––
13
–––
tr
Rise Time
–––
55
–––
td(off)
Turn-Off Delay Time
–––
23
–––
ns
tf
Fall Time
–––
37
–––
LD
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
350
–––
Coss
Output Capacitance
–––
170
–––
Crss
Reverse Transfer Capacitance
–––
92
–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
-1.6
V
trr
Reverse Recovery Time
–––
47
71
ns
Qrr
Reverse Recovery Charge
–––
84
130
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
pF
–––
-11
-44
–––
4.5
7.5
VGS = -10V,See Fig 6 and 13 fh
VDD = -28V
ID = -7.2A
RG = 24
TJ = 25°C, IS = -7.2A, VGS = 0V f
TJ = 25°C, IF = -7.2A
di/dt = 100A/s
fh
Conditions
VGS = 0V, ID = -250A
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.6A
f
VDS = VGS, ID = -250A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = -25V, ID = -7.2A
h
ID = -7.2A
VDS = -44V
Conditions
RD = 3.7
, See Fig.10
fh
VGS = 0V
VDS = -25V
= 1.0MHz,see Fig.5
h
VGS = -20V
VGS = 20V
Pulse width ≤ 300s; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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