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參數(shù)資料
| 型號： | AUIRFS3004-7P |
| 元件分類： | JFETs |
| 英文描述： | 240 A, 40 V, 0.00125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-7 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 366K |
| 代理商： | AUIRFS3004-7P |
www.irf.com
1
HEXFET Power MOSFET
S
D
G
PD - 97704
AUIRFS3004-7P
VDSS
40V
RDS(on) typ.
0.90m
Ω
max.
1.25m
Ω
ID (Silicon Limited)
400Ac
ID (Package Limited)
240A
07/27/11
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
D2Pak 7 Pin
G
S
D
S
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications such as
Electric Power Steering, Battery Switch, SMPS and other
heavy loads.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
●
Automotive Qualified *
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited) e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case kl
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount) j
–––
40
380
2.0
290
See Fig. 14, 15, 22a, 22b
A
°C
300
-55 to + 175
± 20
2.5
Max.
400
280
1610
240
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| AUIRFS3004TRL | 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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| AUIRFS3004 | 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3004TRR | 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFS3004-7PTL | 功能描述:MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3004-7PTR | 功能描述:MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3004-7TRL | 制造商:International Rectifier 功能描述:AUTO HEXFET D2PAK-7P - Tape and Reel 制造商:International Rectifier 功能描述:MOSF N CH 40V 240A HEXFET 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 0.90mOhm 240A |
| AUIRFS3004-7TRR | 制造商:International Rectifier 功能描述:AUTO HEXFET D2PAK-7P - Tape and Reel 制造商:International Rectifier 功能描述:MOSF N CH 40V 240A HEXFET 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 0.90mOhm 240A |
| AUIRFS3004TRL | 功能描述:MOSFET 40V 340A 1.75 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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