- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42908 > AUIRFR6215TRL 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA PDF資料下載
參數(shù)資料
| 型號： | AUIRFR6215TRL |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 265K |
| 代理商： | AUIRFR6215TRL |
AUIRFR6215
HEXFET Power MOSFET
PD-96302A
Specifically designed for Automotive applications of
HEXFET Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
Description
Features
l
P-Channel
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
S
D
G
D-Pak
AUIRFR6215
S
D
G
D
AUTOMOTIVE GRADE
V(BR)DSS
-150V
RDS(on) max. 0.295:
ID
-13A
www.irf.com
1
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
01/28/11
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
ch
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
dh
mJ
IAR
Avalanche Current
ch
A
EAR
Repetitive Avalanche Energy
ch
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
hj
–––
1.4
RθJA
Junction-to-Ambient(PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Max.
-13
-9.0
-44
110
5.0
-55 to + 175
± 20
0.71
300
310
A
°C
-6.6
11
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRFR6215TRR | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215 | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215 | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215TRR | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215TR | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFR6215TRR | 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR8401 | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Rail/Tube 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A |
| AUIRFR8401TR | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Tape and Reel 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A |
| AUIRFR8401TRL | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Tape and Reel 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A |
| AUIRFR8401TRR | 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Tape and Reel 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A |
發(fā)布緊急采購，3分鐘左右您將得到回復。