參數(shù)資料
型號： AUIRFR6215
元件分類： JFETs
英文描述： 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁數(shù)： 5/12頁
文件大?。?/td> 265K
代理商： AUIRFR6215
AUIRFR6215
2
www.irf.com
S
D
G
S
D
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Notes
through are on page 10
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
-0.20 –––
V/°C
–––
0.295
–––
0.58
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
3.6
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-25
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
66
Qgs
Gate-to-Source Charge
–––
8.1
Qgd
Gate-to-Drain ("Miller") Charge
–––
35
td(on)
Turn-On Delay Time
–––
14
–––
tr
Rise Time
–––
36
–––
td(off)
Turn-Off Delay Time
–––
53
–––
tf
Fall Time
–––
37
–––
Between lead,
nH 6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
860
–––
Coss
Output Capacitance
–––
220
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
h
VSD
Diode Forward Voltage
–––
-1.6
V
trr
Reverse Recovery Time
–––
160
240
ns
TJ = 25°C, IF =-6.6A
Qrr
Reverse Recovery Charge
–––
1.2
1.7
C di/dt = 100A/s fh
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = -10V, ID = -6.6A f TJ = 150°C
Static Drain-to-Source On-Resistance
RDS(on)
pF
A
–––
-13
-44
VGS = -10V, See Fig 6 and 13 fh
VDD = -75V
A
nA
nC
ns
Conditions
TJ = 25°C, IS =-6.6A, VGS = 0V f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = -250A
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.6A f
VDS = VGS, ID = -250A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
MOSFET symbol
showing the
VDS =-120V
Conditions
RD = 12
, See Fig. 10 fh
VGS = 0V
VDS = -25V
= 1.0MHz, See Fig.5
h
ID = -6.6A
RG = 6.8
VDS = -50V, ID = -6.6A h
ID = -6.6A
VGS = 20V
VGS = -20V
LD
LS
Internal Source Inductance
Internal Drain Inductance
–––
4.5
–––
7.5
–––
相關(guān)PDF資料
PDF描述
AUIRFR6215 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR6215TRR 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR6215TR 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR6215TRL 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR9024NTRL 11 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
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AUIRFR6215TR 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR6215TRL 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR6215TRR 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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AUIRFR8401TR 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Tape and Reel 制造商:International Rectifier 功能描述:Auto 40V N-Ch FET 4.3mOhms 100A
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