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參數(shù)資料
| 型號(hào)： | AUIRFR5505TRR |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 1107K |
| 代理商： | AUIRFR5505TRR |
AUIRFR/U5505
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 2.8mH
RG = 25, IAS = -6.6A (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ -240A/s, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
S
D
G
S
D
G
Pulse width ≤ 300s; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
-0.049
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.11
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
4.2
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-25
A
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
32
Qgs
Gate-to-Source Charge
–––
7.1
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
15
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––28–––
td(off)
Turn-Off Delay Time
–––
20
–––
ns
tf
Fall Time
–––16–––
LD
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
650
–––
Coss
Output Capacitance
–––
270
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
-1.6
V
trr
Reverse Recovery Time
–––
51
77
ns
Qrr
Reverse Recovery Charge
–––
110
160
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = -25V, ID = -9.6A
h
ID = -9.6A
VDS = -44V
Conditions
RD = 2.8
, See Fig.10
f
VGS = 0V
VDS = -25V
= 1.0MHz,see Fig.5
VGS = -20V
VGS = 20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -9.6A, VGS = 0V f
TJ = 25°C, IF = -9.6A
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = -250A
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -9.6A
f
VDS = VGS, ID = -250A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = -10V,See Fig 6 and 13 f
VDD = -28V
ID = -9.6A
RG = 2.6
–––
4.5
7.5
pF
–––
-18
-64
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| AUIRFU5505 | 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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