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參數(shù)資料
| 型號(hào)： | AUIRFR5505 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大小： | 1107K |
| 代理商： | AUIRFR5505 |
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AUIRFR5505
AUIRFU5505
HEXFET Power MOSFET
12/6/10
www.irf.com
1
D-Pak
AUIRFR5505
GD
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
I-Pak
AUIRFU5505
S
D
G
D
S
D
G
V(BR)DSS
-55V
RDS(on) max.
0.11
ID
-18A
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy(Thermally limited)
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.2
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Max.
-18
-11
-64
-55 to + 150
300 (1.6mm from case )
57
0.45
± 20
-5.0
5.7
150
-9.6
l
Advanced Planar Technology
l
Low On-Resistance
l
P-Channel
l
Dynamic dV/dT Rating
l
150°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Specifically designed for Automotive applications, this
Cellular design of HEXFET Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Description
AUTOMOTIVE GRADE
Features
PD - 96342
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRFR6215TR | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215TRL | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215TRR | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215 | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR6215 | 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFR5505TR | 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR5505TRL | 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR5505TRR | 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR6215 | 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR6215TR | 功能描述:MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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