參數資料
型號: AUIRFR5410TRL
元件分類: JFETs
英文描述: 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: ROHS COMPLIANT, PLASTIC, DPAK-3
文件頁數: 8/12頁
文件大?。?/td> 260K
代理商: AUIRFR5410TRL
AUIRFR5410
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.8
1.4
2.0
2.6
-V
,Source-to-Drain Voltage (V)
-I
,R
ever
se
D
rai
nC
ur
rent
(
A
)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0
400
800
1200
1600
2000
1
10
100
C
,Ca
pa
ci
ta
nc
e(
pF)
A
DS
-V
, Drain-to-Source Voltage (V)
V
= 0V,
f = 1MHz
C
= C
+ C
, C
SHORTED
C
= C
C
= C
+ C
GS
iss
gs
gd
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
50
60
0
5
10
15
20
Q , Total Gate Charge (nC)
-V
,G
at
e-t
o-S
ource
V
ol
tage
(V
)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-8.4A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
-V
, Drain-to-Source Voltage (V)
-I
,D
rai
nC
ur
rent
(
A
)
I
,D
rai
nC
ur
rent
(
A
)
DS
D
10us
100us
1ms
10ms
相關PDF資料
PDF描述
AUIRFR5410TR 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR5410 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR5410TRR 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFR5505TRR 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRFU5505 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
相關代理商/技術參數
參數描述
AUIRFR5410TRR 功能描述:MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR5505 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR5505TR 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR5505TRL 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFR5505TRR 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube