參數(shù)資料
型號: AUIRF7648M2TR1
元件分類: JFETs
英文描述: 14 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-5
文件頁數(shù): 6/11頁
文件大?。?/td> 290K
代理商: AUIRF7648M2TR1
4
www.irf.com
AUIRF7648M2TR/TR1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical On-Resistance vs. Gate Voltage
Fig 4. Typical On-Resistance vs. Drain Current
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
VGS
TOP
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
BOTTOM
5.5V
≤60s PULSE WIDTH
Tj = 25°C
5.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
≤60s PULSE WIDTH
Tj = 175°C
5.5V
VGS
TOP
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
BOTTOM
5.5V
0
50
100
150
200
ID, Drain Current (A)
2.0
4.0
6.0
8.0
10.0
12.0
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
TJ = 25°C
TJ = 125°C
Vgs = 10V
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60s PULSE WIDTH
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
2
4
6
8
10
12
14
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
)
ID = 41A
TJ = 25°C
TJ = 125°C
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
ID = 41A
VGS = 10V
相關PDF資料
PDF描述
AUIRF7665S2TR1 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7665S2TR 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7665S2TR 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7665S2TR1 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF7675M2TR1 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AUIRF7665S2TR 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7665S2TR1 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7669L2TR 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF7669L2TR 1 制造商:International Rectifier 功能描述:AUIRF7669L2TR1 - MOSFET,,N CH,100V,375A,DIRECTFET,L8
AUIRF7669L2TR1 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube