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參數(shù)資料
| 型號： | AUIRF7640S2TR1 |
| 元件分類： | JFETs |
| 英文描述： | 5.8 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 303K |
| 代理商： | AUIRF7640S2TR1 |
AUIRF7640S2TR/TR1
www.irf.com
5
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.5
3.5
4.5
5.5
6.5
V
G
S
(t
h)
,
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 25μA
ID = 250μA
ID = 1.0mA
D = 1.0A
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VGS = 0V
0
4
8
12
16
20
24
ID,Drain-to-Source Current (A)
0
2
4
6
8
10
12
14
16
18
G
fs
,F
or
w
ar
d
T
ra
ns
co
nd
uc
ta
nc
e
(S
)
TJ = 25°C
TJ = 175°C
VDS = 5.0V
380μs PULSE WIDTH
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
2
468
10
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 13A
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
4
8
12
16
20
24
I D
,
D
ra
in
C
ur
re
nt
(A
)
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相關代理商/技術參數(shù) |
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| AUIRF7647S2TR | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7647S2TR1 | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7648M2TR | 功能描述:MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7648M2TR1 | 功能描述:MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7665S2TR | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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