參數(shù)資料
型號(hào): AUIRF3808STRR
元件分類(lèi): JFETs
英文描述: 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 214K
代理商: AUIRF3808STRR
AUIRF3808S
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
ap
ac
ita
nc
e(
pF
)
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
0
40
80
120
160
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
V
,
Gat
e-t
o-Sourc
eVol
tage
(V)
G
GS
I =
D
82A
V
= 15V
DS
V
= 37V
DS
V
= 60V
DS
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