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參數(shù)資料
| 型號： | AUIRF3808 |
| 元件分類： | JFETs |
| 英文描述： | 140 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 215K |
| 代理商： | AUIRF3808 |
AUIRF3808
HEXFET Power MOSFET
07/06/11
www.irf.com
1
PD - 97697
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF3808
S
D
G
D
S
D
G
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
75V
RDS(on) typ.
5.9m
Ω
max
7.0m
Ω
ID
140A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
ch
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
i
–––
0.45
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
-55 to + 175
300
10 lbf
yin (1.1Nym)
330
2.2
± 20
Max.
140
97
550
5.5
See Fig. 12a, 12b, 15, 16
430
82
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PDF描述 |
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| AUIRF4104 | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRF4104STRR | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF4104STRL | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF4104S | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF4905 | 74 A, 55 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF3808 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 140A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 75V, 140A, TO-220AB |
| AUIRF3808S | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF3808S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 106A TO-2 |
| AUIRF3808STRL | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF3808STRR | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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