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參數(shù)資料
| 型號(hào)： | AUIRF3805S-7P |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-7 |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大?。?/td> | 306K |
| 代理商： | AUIRF3805S-7P |
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AUIRF3805S/L-7P
2
www.irf.com
S
D
G
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure
population starting TJ = 25°C, L=0.043mH,
RG = 25, IAS = 140A,VGS =10V.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
Solder mounted on IMS substrate.
Limited by TJmax starting TJ = 25°C, L=0.043mH,
RG = 25
, IAS = 140A,VGS =10V.Part not recommended for
use above this value.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.05
–––
V/°C
RDS(on) SMD
Static Drain-to-Source On-Resistance
–––
2.0
2.6
m
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
110
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
130
200
Qgs
Gate-to-Source Charge–––
53
–––
Qgd
Gate-to-Drain ("Miller") Charge–––
49
–––
td(on)
Turn-On Delay Time
–––23–––
tr
Rise Time
–––
130
–––
td(off)
Turn-Off Delay Time
–––80–––
tf
Fall Time
–––52–––
LD
Internal Drain Inductance
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
7820
–––
Coss
Output Capacitance
–––
1260
–––
Crss
Reverse Transfer Capacitance
–––
610
–––
Coss
Output Capacitance
–––
4310
–––
Coss
Output Capacitance
–––
980
–––
Coss eff.
Effective Output Capacitance
f
–––
1540
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
4568ns
Qrr
Reverse Recovery Charge
–––
35
53
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 140A e
TJ = 25°C, IF = 140A, VDD = 28V
di/dt = 100A/s
e
TJ = 25°C, IS = 140A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 10V
e
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 44V, = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 44V
= 1.0MHz, See Fig. 5
RG = 2.4
ID = 140A
VDS = 25V, ID = 140A
VDD = 28V
ID = 140A
VGS = 20V
VGS = -20V
VDS = 44V
VGS = 10V
e
Conditions
A
nA
nC
ns
nH
pF
A
–––
240
1000
4.5
7.5
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