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參數(shù)資料
| 型號： | AUIRF3805S-7PTRL |
| 元件分類： | JFETs |
| 英文描述： | 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-7 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 306K |
| 代理商： | AUIRF3805S-7PTRL |
AUIRF3805S-7P
AUIRF3805L-7P
HEXFET Power MOSFET
07/20/10
www.irf.com
1
PD - 96318
AUTOMOTIVE GRADE
D2Pak 7 Pin
AUIRF3805S-7P
GD
S
Gate
Drain
Source
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
TO-263CA 7 Pin
AUIRF3805L-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
V(BR)DSS
55V
RDS(on) typ.
2.0m
max. 2.6mi
ID
240A
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
D
GS
SS
S
D
G
S S
S
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, V
GS @ 10V
ID @ TC = 100°C Continuous Drain Current, V
GS @ 10V
ID @ TC = 25°C Continuous Drain Current, V
GS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
j
EAS (tested)
Single Pulse Avalanche Energy Tested Value
d
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
h
–––
0.50
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
g
–––
40
10 lbfin (1.1Nm)
300
2.0
± 20
440
680
See Fig.12a,12b,15,16
300
-55 to + 175
2.3
Max.
240
170
1000
160
A
°C
mJ
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRF3805L-7P | 160 A, 55 V, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF3805STRR | 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF3805S | 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF3805 | 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRF3805STRL | 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF3805S-7PTRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET? Power MOSFET |
| AUIRF3805S-7TRL | 制造商:International Rectifier 功能描述:AUTO HEXFET D2PAK-7TRL - Tape and Reel 制造商:International Rectifier 功能描述:MOSF N CH 55V 160A HEXFET 制造商:International Rectifier 功能描述:Auto 55V N-Ch FET 2.0mOhm 240A |
| AUIRF3805S-7TRR | 制造商:International Rectifier 功能描述:AUTO HEXFET D2PAK-7TRR - Tape and Reel 制造商:International Rectifier 功能描述:MOSF N CH 55V 160A HEXFET 制造商:International Rectifier 功能描述:Auto 55V N-Ch FET 2.0mOhm 240A |
| AUIRF3805STRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF3805STRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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