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參數(shù)資料
| 型號： | AUIRF2807 |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 216K |
| 代理商： | AUIRF2807 |
AUIRF2807
06/23/11
www.irf.com
1
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
S
D
G
HEXFET Power MOSFET
GD
S
Gate
Drain
Source
TO-220AB
AUIRF2807
D
S
D
G
V(BR)DSS
75V
RDS(on) max.
13m
Ω
ID(Silicon Limited)
82A
h
ID (Package Limited)
75A
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
dg
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.65
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
±20
5.9
43
23
10 lbf
yin (1.1Nym)
-55 to + 175
°C/W
300 (1.6mm from case )
W
340
230
Max.
82
h
58
280
75
1.5
PD - 96384
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF2807 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 75A TO-22 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 75V, 75A, TO-220AB |
| AUIRF2903Z | 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF2903Z | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 30V 160A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 30V, 160A, TO-220AB |
| AUIRF2903ZL | 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF2903ZL | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 30V 160A TO-2 |
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