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參數(shù)資料
| 型號(hào)： | AUIRF7805QTR |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | AUIRF7805QTR |
AUIRF7805Q
www.irf.com
1
04/04/11
SO-8
GD
S
Gate
Drain
Source
HEXFET Power MOSFET
Description
l
Advanced Planar Technology
l
Ultra Low On-Resistance
l
Logic Level
l
N Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
150°C Operating Temperature
l
Automotive [Q101] Qualified
l
Lead-Free, RoHS Compliant
Specifically designed for Automotive applications,
these HEXFET Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient
and reliable device for use in Automotive applications
and a wide variety of other applications.
TheefficientSO-8packageprovidesenhancedthermal
characteristicsanddualMOSFETdiecapabilitymaking
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
30V
RDS(on) typ.
9.2mΩ
max. 11mΩ
ID
13A
Features
Top View
8
1
2
3
4
5
6
7
D
G
S
A
S
A
PD – 96367
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
e
W
PD @TA = 70°C
Power Dissipation
e
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
g
–––
20
°C/W
RθJA
Junction-to-Ambient
e
–––
50
-55 to + 150
2.5
0.02
1.6
Max.
13
10
100
± 12
30
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF7805QTRPBF | 制造商:International Rectifier 功能描述: |
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| AUIRF8739L2TR | 功能描述:MOSFET N-CH 40V 545A AUTO 制造商:infineon technologies 系列:HEXFET? 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:57A（Ta），545A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:0.6 毫歐 @ 195A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:3.9V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:562nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:17890pF @ 25V 功率 - 最大值:3.8W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DirectFET? 等距 L8 供應(yīng)商器件封裝:DIRECTFET L8 標(biāo)準(zhǔn)包裝:4,000 |
| AUIRF9540N | 功能描述:MOSFET AUTO -100V 1 P-CH HEXFET 117mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF9540N | 制造商:International Rectifier 功能描述:P CH MOSFET AUTOMOTIVE -100V -23A TO |
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